IMECH-IR  > 力学所知识产出(1956-2008)
Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide
Zhang ZB(张自兵); Lu J; Chen QS(陈启生)
Source PublicationProceedings of the Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, 2004, pp.512-519
2004-09-05
Conference NameSixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China
AbstractThe growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport method (or modified Lely method) has been modeled and simulated. The comprehensive process model incorporates the calculations of radio frequency (RF) induction heating, heat and mass transfer and growth kinetics. The transport equations for electromagnetic field, heat transfer, and species transport are solved using a finite volume-based numerical scheme called MASTRAPP (Multizone Adaptive Scheme for Transport and Phase Change Process). Temperature distribution for a 2-inch growth system is calculated, and the effects of induction heating frequency and current on the temperature distribution and growth rate are investigated. The predicted results have been compared with the experimental data.
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/13764
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen QS(陈启生)
Recommended Citation
GB/T 7714
Zhang ZB,Lu J,Chen QS. Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide[C]Proceedings of the Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, 2004, pp.512-519,2004.
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