3D Finite Volume Scheme for Czochralski Crystal Growth

IMECH-IR > 力学所知识产出(1956-2008)

	3D Finite Volume Scheme for Czochralski Crystal Growth
	Lu J; Zhang ZB(张自兵); Chen QS(陈启生)
	2004-09-05
会议名称	Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, Sept. 5-10, 2004, Beijing, China
摘要	A general three-dimensional model is developed for simulation of the growth process of silicon single crystals by Czochralski technique. The numerical scheme is based on the curvilinear non-orthogonal finite volume discretization. Numerical solutions show that the flow and temperature fields in the melt are asymmetric and unsteady for 8’’ silicon growth. The effects of rotation of crystal on the flow structure are studied. The rotation of crystal forms the Ekman layer in which the temperature gradient along solid/melt surface is small.
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13807
专题	力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Lu J,Zhang ZB,Chen QS. 3D Finite Volume Scheme for Czochralski Crystal Growth[C],2004.