Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

IMECH-IR > 力学所知识产出(1956-2008)

	Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
	Lu J; Zhang ZB(张自兵); Chen QS(陈启生)
会议录名称	Journal of Crystal Growth
	2005-10-16
页码	519-522
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
摘要	The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
WOS记录号	WOS:000239481000077
收录类别	CPCI-S
语种	英语
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13927
专题	力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[C]Journal of Crystal Growth,2005:519-522.

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