Knowledge Management System of Institue of Mechanics, CAS
| Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals | |
Lu J; Zhang ZB(张自兵) ; Chen QS(陈启生)
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| Source Publication | Journal of Crystal Growth |
| 2005-10-16 | |
| Pages | 519-522 |
| Conference Name | 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA |
| Abstract | The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. |
| WOS ID | WOS:000239481000077 |
| Indexed By | CPCI-S |
| Language | 英语 |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/13927 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen QS(陈启生) |
| Recommended Citation GB/T 7714 | Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[C]Journal of Crystal Growth,2005:519-522. |
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