IMECH-IR  > 力学所知识产出(1956-2008)
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
Lu J; Zhang ZB(张自兵); Chen QS(陈启生)
Source PublicationJournal of Crystal Growth
Conference Name3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
AbstractThe physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
WOS IDWOS:000239481000077
Indexed ByCPCI-S
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Corresponding AuthorChen QS(陈启生)
Recommended Citation
GB/T 7714
Lu J,Zhang ZB,Chen QS. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[C]Journal of Crystal Growth,2005:519-522.
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