Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

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	Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
	Chen QS(陈启生); Lu J; Zhang ZB(张自兵); Wei GD; Prasad V
会议录名称	Journal of Crystal Growth
	2005-10-16
页码	197–200
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
摘要	Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
WOS记录号	WOS:000239481000006
收录类别	CPCI-S
语种	英语
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13947
专题	力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[C]Journal of Crystal Growth,2005:197–200.

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