IMECH-IR  > 力学所知识产出(1956-2008)
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
Chen QS(陈启生); Lu J; Zhang ZB(张自兵); Wei GD; Prasad V
Source PublicationJournal of Crystal Growth
2005-10-16
Pages197–200
Conference Name3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
AbstractSilicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
WOS IDWOS:000239481000006
Indexed ByCPCI-S
Language英语
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/13947
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen QS(陈启生)
Recommended Citation
GB/T 7714
Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[C]Journal of Crystal Growth,2005:197–200.
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