Knowledge Management System of Institue of Mechanics, CAS
| Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization | |
Chen QS(陈启生) ; Lu J; Zhang ZB(张自兵); Wei GD; Prasad V
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| Source Publication | Journal of Crystal Growth |
| 2005-10-16 | |
| Pages | 197–200 |
| Conference Name | 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA |
| Abstract | Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures. |
| WOS ID | WOS:000239481000006 |
| Indexed By | CPCI-S |
| Language | 英语 |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/13947 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen QS(陈启生) |
| Recommended Citation GB/T 7714 | Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[C]Journal of Crystal Growth,2005:197–200. |
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