Modeling of ammonothermal growth of gallium nitride single crystals

doi:10.1007/s10853-006-7429-3

IMECH-IR > 力学所知识产出(1956-2008)

	Modeling of ammonothermal growth of gallium nitride single crystals
	Chen QS(陈启生); Pendurti S; Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
发表期刊	Journal of Materials Science
	2005
ISSN	0022-2461
摘要	Ammonothermal growth of GaN crystals with a retrograde solubility has been modeled and simulated here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow in the porous charge is simu
学科领域	力学
DOI	10.1007/s10853-006-7429-3
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000236556400018
关键词[WOS]	NA FLUX METHOD ; HEAT-TRANSFER ; GAN ; PRESSURE ; AMMONIA ; FLOW
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/15598
专题	力学所知识产出(1956-2008)
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Chen QS,Pendurti S,Prasad V,et al. Modeling of ammonothermal growth of gallium nitride single crystals[J]. Journal of Materials Science,2005.
APA	陈启生,Pendurti S,Prasad V,&Chen, QS .(2005).Modeling of ammonothermal growth of gallium nitride single crystals.Journal of Materials Science.
MLA	陈启生,et al."Modeling of ammonothermal growth of gallium nitride single crystals".Journal of Materials Science (2005).

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