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Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity
Li K(李凯); Hu WR(胡文瑞); Li, K (reprint author), Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA.
发表期刊Crystal Growth & Design
2003
卷号3期号:1页码:73-78
ISSN1528-7483
摘要A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.
学科领域力学
DOI10.1021/cg020029+
收录类别SCI
语种英语
WOS记录号WOS:000180259200011
关键词[WOS]INTERFACE SHAPES ; HEAT-TRANSFER ; FLUID-FLOW ; SEGREGATION ; CONVECTION ; DESIGN
WOS研究方向Chemistry ; Crystallography ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://dspace.imech.ac.cn/handle/311007/15811
专题力学所知识产出(1956-2008)
通讯作者Li, K (reprint author), Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA.
推荐引用方式
GB/T 7714
Li K,Hu WR,Li, K . Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity[J]. Crystal Growth & Design,2003,3,1,:73-78.
APA 李凯,胡文瑞,&Li, K .(2003).Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity.Crystal Growth & Design,3(1),73-78.
MLA 李凯,et al."Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity".Crystal Growth & Design 3.1(2003):73-78.
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