Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

doi:10.1007/s10409-005-0090-2

IMECH-IR > 力学所知识产出(1956-2008)

	Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
	Zhang ZB(张自兵); Lu J; Chen QS(陈启生); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Source Publication	Acta Mechanica Sinica
	2006
Volume	22 Issue:1 Pages:40-45
ISSN	0567-7718
Abstract	A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
Subject Area	力学
DOI	10.1007/s10409-005-0090-2
Indexed By	SCI ; EI ; CSCD
Language	英语
WOS ID	WOS:000235970000007
WOS Keyword	SUBLIMATION GROWTH ; SILICON-CARBIDE ; BULK GROWTH
WOS Research Area	Engineering ; Mechanics
WOS Subject	Engineering, Mechanical ; Mechanics
Citation statistics	Cited Times:6[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/16474
Collection	力学所知识产出(1956-2008)
Corresponding Author	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Recommended Citation GB/T 7714	Zhang ZB,Lu J,Chen QS,et al. Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method[J]. Acta Mechanica Sinica,2006,22(1):40-45.
APA	张自兵,Lu J,陈启生,Prasad V,&Chen, QS .(2006).Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method.Acta Mechanica Sinica,22(1),40-45.
MLA	张自兵,et al."Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method".Acta Mechanica Sinica 22.1(2006):40-45.

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