Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

doi:10.1007/s10409-005-0090-2

IMECH-IR > 力学所知识产出(1956-2008)

	Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
	Zhang ZB(张自兵); Lu J; Chen QS(陈启生); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
发表期刊	Acta Mechanica Sinica
	2006
卷号	22 期号:1 页码:40-45
ISSN	0567-7718
摘要	A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
学科领域	力学
DOI	10.1007/s10409-005-0090-2
收录类别	SCI ; EI ; CSCD
语种	英语
WOS记录号	WOS:000235970000007
关键词[WOS]	SUBLIMATION GROWTH ; SILICON-CARBIDE ; BULK GROWTH
WOS研究方向	Engineering ; Mechanics
WOS类目	Engineering, Mechanical ; Mechanics
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/16474
专题	力学所知识产出(1956-2008)
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Zhang ZB,Lu J,Chen QS,et al. Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method[J]. Acta Mechanica Sinica,2006,22,1,:40-45.
APA	张自兵,Lu J,陈启生,Prasad V,&Chen, QS .(2006).Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method.Acta Mechanica Sinica,22(1),40-45.
MLA	张自兵,et al."Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method".Acta Mechanica Sinica 22.1(2006):40-45.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
95010.pdf（446KB）			开放获取	--	浏览下载