IMECH-IR  > 力学所知识产出(1956-2008)
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
Zhang ZB(张自兵); Lu J; Chen QS(陈启生); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Source PublicationActa Mechanica Sinica
2006
Volume22Issue:1Pages:40-45
ISSN0567-7718
AbstractA finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
Subject Area力学
DOI10.1007/s10409-005-0090-2
Indexed BySCI ; EI ; CSCD
Language英语
WOS IDWOS:000235970000007
WOS KeywordSUBLIMATION GROWTH ; SILICON-CARBIDE ; BULK GROWTH
WOS Research AreaEngineering ; Mechanics
WOS SubjectEngineering, Mechanical ; Mechanics
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/16474
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZB,Lu J,Chen QS,et al. Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method[J]. Acta Mechanica Sinica,2006,22(1):40-45.
APA 张自兵,Lu J,陈启生,Prasad V,&Chen, QS .(2006).Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method.Acta Mechanica Sinica,22(1),40-45.
MLA 张自兵,et al."Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method".Acta Mechanica Sinica 22.1(2006):40-45.
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