Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

doi:10.1016/j.jcrysgro.2006.04.067

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	Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
	Lu J; Zhang ZB(张自兵); Chen QS(陈启生); Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
发表期刊	Journal of Crystal Growth
	2006
卷号	292 期号:2 页码:519-522
ISSN	0022-0248
摘要	The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
关键词	Computer Simulation Growth Model Mass Transfer Growth From Vapor Seed Crystals Semiconducting Silicon Compounds
学科领域	力学
DOI	10.1016/j.jcrysgro.2006.04.067
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000239481000077
关键词[WOS]	VAPOR TRANSPORT GROWTH ; SUBLIMATION GROWTH ; SINGLE-CRYSTALS ; KINETICS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/16479
专题	力学所知识产出(1956-2008)
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Lu J,Zhang ZB,Chen QS,et al. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[J]. Journal of Crystal Growth,2006,292,2,:519-522.
APA	Lu J,Zhang ZB,Chen QS,&Chen, QS .(2006).Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals.Journal of Crystal Growth,292(2),519-522.
MLA	Lu J,et al."Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals".Journal of Crystal Growth 292.2(2006):519-522.

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