IMECH-IR  > 力学所知识产出(1956-2008)
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
Lu J; Zhang ZB(张自兵); Chen QS(陈启生); Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Source PublicationJournal of Crystal Growth
2006
Volume292Issue:2Pages:519-522
ISSN0022-0248
AbstractThe physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
KeywordComputer Simulation Growth Model Mass Transfer Growth From Vapor Seed Crystals Semiconducting Silicon Compounds
Subject Area力学
DOI10.1016/j.jcrysgro.2006.04.067
Indexed BySCI ; EI
Language英语
WOS IDWOS:000239481000077
WOS KeywordVAPOR TRANSPORT GROWTH ; SUBLIMATION GROWTH ; SINGLE-CRYSTALS ; KINETICS
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/16479
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Recommended Citation
GB/T 7714
Lu J,Zhang ZB,Chen QS,et al. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[J]. Journal of Crystal Growth,2006,292(2):519-522.
APA Lu J,Zhang ZB,Chen QS,&Chen, QS .(2006).Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals.Journal of Crystal Growth,292(2),519-522.
MLA Lu J,et al."Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals".Journal of Crystal Growth 292.2(2006):519-522.
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