Knowledge Management System of Institue of Mechanics, CAS
| Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals | |
Lu J; Zhang ZB(张自兵) ; Chen QS(陈启生); Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2006 | |
| Volume | 292Issue:2Pages:519-522 |
| ISSN | 0022-0248 |
| Abstract | The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation. |
| Keyword | Computer Simulation Growth Model Mass Transfer Growth From Vapor Seed Crystals Semiconducting Silicon Compounds |
| Subject Area | 力学 |
| DOI | 10.1016/j.jcrysgro.2006.04.067 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000239481000077 |
| WOS Keyword | VAPOR TRANSPORT GROWTH ; SUBLIMATION GROWTH ; SINGLE-CRYSTALS ; KINETICS |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/16479 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
| Recommended Citation GB/T 7714 | Lu J,Zhang ZB,Chen QS,et al. Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals[J]. Journal of Crystal Growth,2006,292(2):519-522. |
| APA | Lu J,Zhang ZB,Chen QS,&Chen, QS .(2006).Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals.Journal of Crystal Growth,292(2),519-522. |
| MLA | Lu J,et al."Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals".Journal of Crystal Growth 292.2(2006):519-522. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| 152650.pdf（295KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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