Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure

doi:10.1088/0022-3727/40/4/032

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	Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure
	Zhang Y(张吟); Zhang, Y (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, LNM, Beijing 100080, Peoples R China.
发表期刊	Journal of Physics D-Applied Physics
	2007
卷号	40 期号:4 页码:1118-1127
ISSN	0022-3727
摘要	The localized dislocation at the interface induces uneven strain distribution in two wafer-bonded layers. Because of the different elastic properties of two bonding layers and this uneven strain distribution, the bilayered microstructure deflects and deflection relaxes the strains. Depending on the microstructure dimensions, elastic properties and lattice parameters, the contribution of deflection to strain field can be very significant. The interface condition also plays an important role in relaxing strain. Two models capable of describing different interface conditions are used for the analysis and offer a more comprehensive study on the dislocation-induced strain field in a wafer-bonded bilayered microstructure. The combined effect of microstructure dimensions and interface condition on the strain is presented and compared.
学科领域	力学
DOI	10.1088/0022-3727/40/4/032
收录类别	SCI
语种	英语
WOS记录号	WOS:000245274300033
WOS研究方向	Physics
WOS类目	Physics, Applied
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/16972
专题	力学所知识产出(1956-2008)
通讯作者	Zhang, Y (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, LNM, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Zhang Y,Zhang, Y . Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure[J]. Journal of Physics D-Applied Physics,2007,40,4,:1118-1127.
APA	张吟,&Zhang, Y .(2007).Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure.Journal of Physics D-Applied Physics,40(4),1118-1127.
MLA	张吟,et al."Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure".Journal of Physics D-Applied Physics 40.4(2007):1118-1127.

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