IMECH-IR  > 力学所知识产出(1956-2008)
Structural and magnetic properties of insulating Zn1-xCoxO thin films
Yin Z; Chen NF(陈诺夫); Chai CL; Yang F; Yin, Z (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Source PublicationJournal of Applied Physics
2004
Volume96Issue:9Pages:5093-5096
ISSN0021-8979
AbstractCobalt-doped ZnO (Zn1-xCoxO) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn1-xCoxO films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07
KeywordDoped Zno Films Electric Properties Semiconductors Ferromagnetism Spintronics Design
DOI10.1063/1.1756212
Indexed BySCI
Language英语
WOS IDWOS:000224799300057
WOS KeywordDOPED ZNO FILMS ; ELECTRIC PROPERTIES ; SEMICONDUCTORS ; FERROMAGNETISM ; SPINTRONICS ; DESIGN
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Citation statistics
Cited Times:68[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/33755
Collection力学所知识产出(1956-2008)
Corresponding AuthorYin, Z (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Yin Z,Chen NF,Chai CL,et al. Structural and magnetic properties of insulating Zn1-xCoxO thin films[J]. Journal of Applied Physics,2004,96,9,:5093-5096.
APA Yin Z,陈诺夫,Chai CL,Yang F,&Yin, Z .(2004).Structural and magnetic properties of insulating Zn1-xCoxO thin films.Journal of Applied Physics,96(9),5093-5096.
MLA Yin Z,et al."Structural and magnetic properties of insulating Zn1-xCoxO thin films".Journal of Applied Physics 96.9(2004):5093-5096.
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