IMECH-IR  > 力学所知识产出(1956-2008)
扩硼Si在连续CO_2激光辐照后的特性
李元恒; 张玉峰; 吴书祥; 杜永昌
Source Publication半导体学报
1982
Volume3Issue:4Pages:340-342
ISSN0253-4177
Abstract本文研究了高温高浓度扩硼Si在连续CO_2激光辐照后表面薄层电阻随激光功率密度和扫描速度的变化.实验发现,一定功率密度和扫描速度的CO_2激光辐照可使扩硼Si的载流子面密度提高到原来的一倍半到三倍左右.
Keyword连续co_2激光 激光辐照 薄层电阻 扩硼 激光功率密度 辐照后 激光扫描速度 电激活 面密度
Language中文
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/38034
Collection力学所知识产出(1956-2008)
Corresponding Author李元恒
Recommended Citation
GB/T 7714
李元恒,张玉峰,吴书祥,等. 扩硼Si在连续CO_2激光辐照后的特性[J]. 半导体学报,1982,3,4,:340-342.
APA 李元恒,张玉峰,吴书祥,&杜永昌.(1982).扩硼Si在连续CO_2激光辐照后的特性.半导体学报,3(4),340-342.
MLA 李元恒,et al."扩硼Si在连续CO_2激光辐照后的特性".半导体学报 3.4(1982):340-342.
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