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泰氟龙烧蚀对黏性激波层电子密度的影响
Alternative TitleThe effect of teflon ablation on the electron density in viscous shock layer
唐锦荣; 彭世镠
Source Publication力学学报
2002-11-19
Volume34Issue:6Pages:874-880
Abstract采用黏性激波层基本方程组对有无泰氟龙烧蚀两种情况下的钝锥体化学非平衡绕流作了数值求解,以研究泰氟龙烧蚀对流场电子密度的影响规律。算例结果表明:泰氟龙烧蚀确有降低流场电子密度的效应。平衡催化壁工况下这种效应的强度,显著大于非催化壁工况下的强度;远下游截面处的这种效应的强度,显著大于驻点区的强度。此外,通过计算结果分析,对形成上述影响规律的原因作了初步讨论。
Keyword泰氟龙烧蚀 黏性激波层 电子密度 非催化壁 平衡催化壁
Indexed ByCSCD
Language中文
CSCD IDCSCD:1013605
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/41128
Collection力学所知识产出(1956-2008)
Corresponding Author唐锦荣
Recommended Citation
GB/T 7714
唐锦荣,彭世镠. 泰氟龙烧蚀对黏性激波层电子密度的影响[J]. 力学学报,2002,34,6,:874-880.
APA 唐锦荣,&彭世镠.(2002).泰氟龙烧蚀对黏性激波层电子密度的影响.力学学报,34(6),874-880.
MLA 唐锦荣,et al."泰氟龙烧蚀对黏性激波层电子密度的影响".力学学报 34.6(2002):874-880.
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