IMECH-IR  > 力学所知识产出(1956-2008)
低能离子束沉积制备GaAs:Gd的研究
宋书林; 陈诺夫; 周剑平; 尹志岗; 李艳丽; 杨少延; 刘志凯
Source Publication半导体学报
2004-12-08
Volume25Issue:12Pages:1658-1661
Abstract对室温条件下用低能离子束沉积得到的 Ga As∶ Gd样品 ,借助 X射线衍射 (XRD)和高分辨 X射线衍射 (HR-XRD)进行了结构分析 ,结果表明没有出现新的衍射峰 ,并且摇摆曲线的形状与 Gd的注入计量密切相关 .运用 X光电子能谱仪对比分析了 Gd注入后 ,衬底中主要元素 Ga2 p和 As3d的化学位移 ,以及不同计量的样品中注入的Gd4 d芯能级束缚能的变化 ,并分析了铁磁性产生的可能原因 .
KeywordGaas∶gd X射线衍射 X光电子能谱
Language中文
Funding Organization国家自然科学基金 (批准号 :60 1760 0 1)
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/41718
Collection力学所知识产出(1956-2008)
Corresponding Author宋书林
Recommended Citation
GB/T 7714
宋书林,陈诺夫,周剑平,等. 低能离子束沉积制备GaAs:Gd的研究[J]. 半导体学报,2004,25(12):1658-1661.
APA 宋书林.,陈诺夫.,周剑平.,尹志岗.,李艳丽.,...&刘志凯.(2004).低能离子束沉积制备GaAs:Gd的研究.半导体学报,25(12),1658-1661.
MLA 宋书林,et al."低能离子束沉积制备GaAs:Gd的研究".半导体学报 25.12(2004):1658-1661.
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