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铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长
彭长涛; 陈诺夫; 张富强; 林兰英
Source Publication半导体学报
2003-05-08
Volume24Issue:5Pages:494-498
Abstract采用一种新的生长铁磁 /半导体异质结材料的方法——物理气相沉积方法生长了一种铁磁 /半导体异质结材料 Mn Sb/Si.对所获得的样品进行特征 X射线能谱分析表明 Mn和 Sb在 Si衬底上的沉积速率相近 ,它们的原子百分数之比接近 1∶ 1.X射线衍射分析发现薄膜中形成了 Mn Sb相 ,样品在室温下测出磁滞回线也从侧面验证了存在 Mn Sb相 .用原子力显微镜对样品的表面进行观察 ,发现 Mn Sb呈有规则形状的小晶粒状 ,晶粒大小比较均匀 ,尺寸大多数在 5 0 0 nm左右 .
Keyword铁磁/半导体异质结 物理气相沉积 Mnsb
Language中文
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/42108
Collection力学所知识产出(1956-2008)
Corresponding Author彭长涛
Recommended Citation
GB/T 7714
彭长涛,陈诺夫,张富强,等. 铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长[J]. 半导体学报,2003,24(5):494-498
APA 彭长涛,陈诺夫,张富强,&林兰英.(2003).铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长.半导体学报,24(5),494-498.
MLA 彭长涛,et al."铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长".半导体学报 24.5(2003):494-498.
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