IMECH-IR  > 力学所知识产出(1956-2008)
离子束淀积方法制备GdSi_2薄膜
李艳丽; 陈诺夫; 周剑平; 宋书林; 杨少延; 刘志凯
Source Publication半导体学报
2004-08-08
Volume25Issue:8Pages:972-975
Abstract采用离子束淀积方法制备了单相 Gd Si2 薄膜 .用俄歇电子谱仪对样品的成分进行了分析 ,用 X射线衍射方法分析了样品的结构 ,并用扫描电子显微镜观察了样品的表面形貌 .X射线衍射分析发现在 4 0 0℃沉积的样品中仅存在正交的 Gd Si2 相 .样品在氩气氛中 35 0℃ ,30 m in退火处理后 ,Gd Si2 相衍射峰的半高宽变窄 ,说明经过退火处理 ,Gd Si2 的晶体质量变得更好
Keyword离子束淀积 X射线衍射 Gdsi
Language中文
Funding Organization国家自然科学基金 (批准号 :60 1760 0 1)
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/42372
Collection力学所知识产出(1956-2008)
Corresponding Author李艳丽
Recommended Citation
GB/T 7714
李艳丽,陈诺夫,周剑平,等. 离子束淀积方法制备GdSi_2薄膜[J]. 半导体学报,2004,25(8):972-975.
APA 李艳丽,陈诺夫,周剑平,宋书林,杨少延,&刘志凯.(2004).离子束淀积方法制备GdSi_2薄膜.半导体学报,25(8),972-975.
MLA 李艳丽,et al."离子束淀积方法制备GdSi_2薄膜".半导体学报 25.8(2004):972-975.
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