IMECH-IR  > 力学所知识产出(1956-2008)
纳米压痕和划痕法测定氧化硅薄膜材料的力学特性
张海霞; 张泰华; 郇勇
Source Publication微纳电子技术
2003-08-25
Issue7-8Pages:245-248
Abstract为了研究不同制备工艺对材料力学性能的影响 ,选择了热氧化、LPCVD和PECVD三种典型工艺 ,在硅片上制备 1μm氧化硅薄膜。通过纳米压痕和划痕检测可知 ,热氧化工艺制备的SiO2薄膜的硬度和模量最大 ,LPCVD制备的样品界面结合强度高于PECVD。纳米压痕和划痕技术为此提供了丰富的近表面弹塑性变形和断裂等的信息 ,是评价微米薄膜力学性能的有效手段
Keyword纳米压痕 纳米划痕 力学特性 氧化硅 热氧化 Lpcvd Pecvd
Language中文
Funding Organization973项目 (G19990 3 3 10 9)
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/42418
Collection力学所知识产出(1956-2008)
Corresponding Author张海霞
Recommended Citation
GB/T 7714
张海霞,张泰华,郇勇. 纳米压痕和划痕法测定氧化硅薄膜材料的力学特性[J]. 微纳电子技术,2003(7-8):245-248
APA 张海霞,张泰华,&郇勇.(2003).纳米压痕和划痕法测定氧化硅薄膜材料的力学特性.微纳电子技术(7-8),245-248.
MLA 张海霞,et al."纳米压痕和划痕法测定氧化硅薄膜材料的力学特性".微纳电子技术 .7-8(2003):245-248.
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