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Surface transformation and inversion domain boundaries in gallium nitride nanorods
Xiao P; Wang X; Wang J; Ke FJ(柯孚久); Zhou M; Bai YL(白以龙)
Source PublicationApplied Physics Letter
2009
Volume95Issue:21Pages:211907
ISSN0003-6951
AbstractPhase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.
DOI10.1063/1.3268467
URL查看原文
Indexed BySCI
Language英语
WOS IDWOS:000272895100015
WOS KeywordPRESSURE PHASE-TRANSITION ; MOLECULAR-BEAM EPITAXY ; LIGHT-EMITTING-DIODES ; GAN NANORODS ; WURTZITE ; BLUE ; PHOTOLUMINESCENCE ; SEMICONDUCTORS
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Funding OrganizationNSFC [10772012, 10732090] ; NBRPC [2007CB814800] ; KOSEF [R31-2008-000-10083-0]
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/43547
Collection非线性力学国家重点实验室
Corresponding AuthorXiao P
Recommended Citation
GB/T 7714
Xiao P,Wang X,Wang J,et al. Surface transformation and inversion domain boundaries in gallium nitride nanorods[J]. Applied Physics Letter,2009,95(21):211907.
APA Xiao P,Wang X,Wang J,柯孚久,Zhou M,&白以龙.(2009).Surface transformation and inversion domain boundaries in gallium nitride nanorods.Applied Physics Letter,95(21),211907.
MLA Xiao P,et al."Surface transformation and inversion domain boundaries in gallium nitride nanorods".Applied Physics Letter 95.21(2009):211907.
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