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Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems
Chen QS(陈启生); Jiang YN(姜燕妮); Yan JY(颜君毅); Li W(李炜); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Source PublicationResearch on Chemical Intermediates
2011
Volume37Issue:2-5Pages:467-477
ISSN0922-6168
AbstractGallium nitride (GaN) is a wide-bandgap semiconductor material with a wide array of applications in optoelectronics and electronics. Modeling of the fluid flow and thermal fields is discussed, and simulations of velocity and volumetric-flow-rate profiles in different pressure systems are shown. The nutrient is considered as a porous media bed, and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite-volume method. We analyzed the heat and mass transfer behaviors in autoclaves with diameters of 2.22, 4.44, and 10 cm. The effects of baffle design on flow pattern, and heat and mass transfer in different autoclaves are analyzed. For the research-grade autoclave with diameter of 2.22 cm, the constraint for the GaN growth is found to be the growth kinetics and the total area of seed surfaces in the case of baffle opening of 10%. For large-size pressure systems, the concentration profiles change dramatically due to stronger convection at higher Grashof numbers. The volumetric flow rates of the solvent across the baffles are calculated. Since ammonothermal growth experiments are expensive and time consuming, modeling becomes an effective tool for research and optimization of ammonothermal growth processes.
KeywordGan Ammonothermal Growth Baffle Opening Fluid Flow Thermal Fields Gallium Nitride
Subject AreaChemistry
DOI10.1007/s11164-011-0276-0
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000291159400039
WOS KeywordGALLIUM NITRIDE
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
DepartmentNML流动稳定性与复杂流动
Classification二类/Q2
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/45089
Collection国家微重力实验室
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Chen QS,Jiang YN,Yan JY,et al. Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems[J]. Research on Chemical Intermediates,2011,37(2-5):467-477.
APA 陈启生,姜燕妮,颜君毅,李炜,Prasad V,&Chen, QS .(2011).Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems.Research on Chemical Intermediates,37(2-5),467-477.
MLA 陈启生,et al."Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems".Research on Chemical Intermediates 37.2-5(2011):467-477.
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