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Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
Zhang H(张汉); Chen NF(陈诺夫); Wang Y(汪宇); Yin ZG(尹志岗); Zhang XW(张兴旺); Shi HW(施辉伟); Wang YS(王彦硕); Huang TM(黄添懋)
Source Publication半导体学报
2010
Volume31Issue:8Pages:084009
AbstractWe have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%(300 suns,AM1.5d) for the optimal structure parameter(1550 nm GaInP top and 5500 nm GaInAs bottom),showing promising application prospects due to its acceptable lattice-mismatch(0.43%) to the GaAs substrate.
KeywordⅢ-ⅴsemiconductor Photovoltaic Tandem Solar Cell Theoretical Efficiency
Subject Area微重力流体力学
Language英语
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/45692
Collection国家微重力实验室
Recommended Citation
GB/T 7714
Zhang H,Chen NF,Wang Y,et al. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. 半导体学报,2010,31(8):084009.
APA 张汉.,陈诺夫.,汪宇.,尹志岗.,张兴旺.,...&黄添懋.(2010).Design and optimization of a monolithic GaInP/GaInAs tandem solar cell.半导体学报,31(8),084009.
MLA 张汉,et al."Design and optimization of a monolithic GaInP/GaInAs tandem solar cell".半导体学报 31.8(2010):084009.
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