Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

IMECH-IR > 微重力重点实验室

	Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
	Zhang H(张汉); Chen NF(陈诺夫); Wang Y(汪宇); Yin ZG(尹志岗); Zhang XW(张兴旺); Shi HW(施辉伟); Wang YS(王彦硕); Huang TM(黄添懋)
发表期刊	半导体学报
	2010
卷号	31 期号:8 页码:084009
摘要	We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP₂/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%（300 suns,AM1.5d） for the optimal structure parameter（1550 nm GaInP top and 5500 nm GaInAs bottom）,showing promising application prospects due to its acceptable lattice-mismatch（0.43%） to the GaAs substrate.
关键词	Ⅲ-ⅴsemiconductor Photovoltaic Tandem Solar Cell Theoretical Efficiency
学科领域	微重力流体力学
语种	英语
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/45692
专题	微重力重点实验室
推荐引用方式 GB/T 7714	Zhang H,Chen NF,Wang Y,et al. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. 半导体学报,2010,31,8,:084009.
APA	张汉.,陈诺夫.,汪宇.,尹志岗.,张兴旺.,...&黄添懋.(2010).Design and optimization of a monolithic GaInP/GaInAs tandem solar cell.半导体学报,31(8),084009.
MLA	张汉,et al."Design and optimization of a monolithic GaInP/GaInAs tandem solar cell".半导体学报 31.8(2010):084009.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Designandoptimizatio（455KB）			开放获取	使用许可	浏览下载