Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study | |
Zhang J(张俊); Liu C(刘崇); Shu YH(舒勇华); Fan J(樊菁); Fan, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China. | |
发表期刊 | Applied Surface Science |
2012 | |
卷号 | 261期号:15页码:690-696 |
ISSN | 0169-4332 |
摘要 | Molecular dynamics simulations are used to study the growth and properties of Cu thin film deposited on Si(0 0 1) substrate. In particular, growth mode, crystalline structure and orientation, and surface morphology of Cu thin film are investigated in detail. Our simulation results predict that the growth of Cu thin film on Si substrate is three-dimensional island growth mode. In the growth process, interspecies mixing occurs at the interface between Cu film and Si substrate, and the mixing length increases as the increasing of substrate temperature. Based on the common neighbor analysis of atoms, three crystalline structures in the deposited Cu films are indentified. More important, the formed face-centered cubic (fcc) structure of Cu thin film is (0 0 1) oriented with a rotation by 45° along 〈0 0 1〉 axis when the substrate temperature is 300 K, while the fcc structure of Cu thin film becomes to be (1 1 1) oriented when the substrate temperature is 900 K. The crystalline orientation of deposited film could be explained based on the surface free energy of different crystalline planes as well as the geometrical lattice match rule. In addition, surface roughness of Cu thin film decreases as the increasing of substrate temperature due to the enhancement of surface diffusion. |
关键词 | Embedded-atom Method Epitaxial-growth Si Molecular Dynamics Method Systems Surface Si(111) Metals Al Thin Film Deposition And Growth Crystalline Structure And Orientation Surface Roughness |
学科领域 | 稀薄气体力学 |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000310442500104 |
课题组名称 | LHD微尺度和非平衡流动 |
论文分区 | 一类 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://dspace.imech.ac.cn/handle/311007/45754 |
专题 | 高温气体动力学国家重点实验室 |
通讯作者 | Fan, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang J,Liu C,Shu YH,et al. Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study[J]. Applied Surface Science,2012,261,15,:690-696. |
APA | Zhang J,Liu C,Shu YH,Fan J,&Fan, J .(2012).Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study.Applied Surface Science,261(15),690-696. |
MLA | Zhang J,et al."Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study".Applied Surface Science 261.15(2012):690-696. |
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