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Title:
Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study
Author: Zhang J(张俊); Liu C(刘崇); Shu YH(舒勇华); Fan J(樊菁)
Source: Applied Surface Science
Issued Date: 2012
Volume: 261, Issue:15, Pages:690-696
Abstract:

Molecular dynamics simulations are used to study the growth and properties of Cu thin film deposited on Si(0 0 1) substrate. In particular, growth mode, crystalline structure and orientation, and surface morphology of Cu thin film are investigated in detail. Our simulation results predict that the growth of Cu thin film on Si substrate is three-dimensional island growth mode. In the growth process, interspecies mixing occurs at the interface between Cu film and Si substrate, and the mixing length increases as the increasing of substrate temperature. Based on the common neighbor analysis of atoms, three crystalline structures in the deposited Cu films are indentified. More important, the formed face-centered cubic (fcc) structure of Cu thin film is (0 0 1) oriented with a rotation by 45° along 〈0 0 1〉 axis when the substrate temperature is 300 K, while the fcc structure of Cu thin film becomes to be (1 1 1) oriented when the substrate temperature is 900 K. The crystalline orientation of deposited film could be explained based on the surface free energy of different crystalline planes as well as the geometrical lattice match rule. In addition, surface roughness of Cu thin film decreases as the increasing of substrate temperature due to the enhancement of surface diffusion.


Keyword: embedded-atom method ; epitaxial-growth ; si ; molecular dynamics method ; systems ; surface ; si(111) ; metals ; al ; thin film deposition and growth ; crystalline structure and orientation ; surface roughness
Language: 英语
Indexed Type: SCI ; EI
Corresponding Author: Fan, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China.
Related URLs: 查看原文
DOC Type: Article
WOS ID: WOS:000310442500104
ISSN: 0169-4332
Subject: 流体力学::稀薄气体力学
Department: LHD微尺度和非平衡流动
Classification: 一类
Citation statistics:
Content Type: 期刊论文
URI: http://dspace.imech.ac.cn/handle/311007/45754
Appears in Collections:高温气体动力学国家重点实验室_期刊论文

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Recommended Citation:
Zhang J,Liu C,Shu YH,et al. Growth and properties of Cu thin film deposited on Si(001) substrate: A molecular dynamics simulation study[J]. Applied Surface Science,2012-01-01,261(15):690-696.
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