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Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
Wei TB; Wu K; Lan D(蓝鼎); Yan QF; Chen Y; Du CX; Wang JX; Zeng YP; Li JM; Wei, TB; Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China.
Source PublicationAPPLIED PHYSICS LETTERS
2012-11-19
Volume101Issue:21Pages:211111/1-211111/5
ISSN0003-6951
AbstractWe report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs.
KeywordLight Extraction Arrays Output
Subject Area固体力学
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000311477600011
Funding OrganizationThis work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61274040 and 61274008, by the National Basic Research Program of China under Grant No. 2011CB301902, and by the National High Technology Program of China under Grant No. 2011AA03A103.
DepartmentNML空间材料物理力学
Classification一类
Citation statistics
Cited Times:41[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/46599
Collection国家微重力实验室
Corresponding AuthorWei, TB; Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wei TB,Wu K,Lan D,et al. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography[J]. APPLIED PHYSICS LETTERS,2012,101(21):211111/1-211111/5.
APA Wei TB.,Wu K.,Lan D.,Yan QF.,Chen Y.,...&Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China..(2012).Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography.APPLIED PHYSICS LETTERS,101(21),211111/1-211111/5.
MLA Wei TB,et al."Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography".APPLIED PHYSICS LETTERS 101.21(2012):211111/1-211111/5.
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