Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography

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	Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
	Wei TB; Wu K; Lan D(蓝鼎); Yan QF; Chen Y; Du CX; Wang JX; Zeng YP; Li JM; Wei, TB; Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China.
发表期刊	APPLIED PHYSICS LETTERS
	2012-11-19
卷号	101 期号:21 页码:211111/1-211111/5
ISSN	0003-6951
摘要	We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs.
关键词	Light Extraction Arrays Output
学科领域	固体力学
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000311477600011
项目资助者	This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61274040 and 61274008, by the National Basic Research Program of China under Grant No. 2011CB301902, and by the National High Technology Program of China under Grant No. 2011AA03A103.
课题组名称	NML空间材料物理力学
论文分区	一类
引用统计	被引频次：47[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/46599
专题	微重力重点实验室
通讯作者	Wei, TB; Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wei TB,Wu K,Lan D,et al. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography[J]. APPLIED PHYSICS LETTERS,2012,101,21,:211111/1-211111/5.
APA	Wei TB.,Wu K.,Lan D.,Yan QF.,Chen Y.,...&Chinese Acad Sci, State Key Lab Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China..(2012).Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography.APPLIED PHYSICS LETTERS,101(21),211111/1-211111/5.
MLA	Wei TB,et al."Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography".APPLIED PHYSICS LETTERS 101.21(2012):211111/1-211111/5.

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