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Molecular dynamics simulation of deposition and growth of cu thin film on si substrate
Zhang J(张俊); Liu C(刘崇); Shu YH(舒勇华); Fan J(樊菁); Zhang, J (reprint author), Chinese Acad Sci, State Key Lab High Temp Gas Dynam, Inst Mech, Beijing 100190, Peoples R China.
Source Publication28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2
2012
Pages919-925
Conference Name28th International Symposium on Rarefied Gas Dynamics (RGD)
Conference DateJUL 09-13, 2012
Conference PlaceZaragoza, SPAIN
AbstractGrowth and properties of Cu thin film deposited on Si substrate is studied using molecular dynamics method. Tersoff potential parameters for the interaction between Cu and Si are fitted to reproduce the lattice structure of copper silicide. We focus on the growth mode, crystalline structure and orientation, and surface morphology of Cu thin film. The effect of substrate temperature on the crystalline orientation and surface roughness is studied.
KeywordThin Film Growth Crystalline Structure And Orientation Surface Roughness Molecular Dynamics Embedded-atom Method Surfaces Systems Metals
DepartmentLHD微尺度和非平衡流动
ISBN978-0-7354-1115-9
URL查看原文
Indexed ByCPCI
Language英语
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/46815
Collection高温气体动力学国家重点实验室
Corresponding AuthorZhang, J (reprint author), Chinese Acad Sci, State Key Lab High Temp Gas Dynam, Inst Mech, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Zhang J,Liu C,Shu YH,et al. Molecular dynamics simulation of deposition and growth of cu thin film on si substrate[C]28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2,2012:919-925.
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