28th International Symposium on Rarefied Gas Dynamics (RGD)
JUL 09-13, 2012
Growth and properties of Cu thin film deposited on Si substrate is studied using molecular dynamics method. Tersoff potential parameters for the interaction between Cu and Si are fitted to reproduce the lattice structure of copper silicide. We focus on the growth mode, crystalline structure and orientation, and surface morphology of Cu thin film. The effect of substrate temperature on the crystalline orientation and surface roughness is studied.
Zhang J,Liu C,Shu YH,et al. Molecular dynamics simulation of deposition and growth of cu thin film on si substrate[C]28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2,2012:919-925.