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Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures
Zhang J(张俊); Liu C(刘崇); Fan J(樊菁); Zhang, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China.
Source PublicationAPPLIED SURFACE SCIENCE
2013-07-01
Volume276Pages:417-423
ISSN0169-4332
AbstractDeposition and growth of Cu thin films on Si(1 0 0), Si(1 1 0) and Si(1 1 1) substrates are studied using molecular dynamics method. The Cu/Si interface diffusion, surface roughness, crystalline structure and growth orientation of Cu thin films are investigated in detail. The effects of substrate surface and temperature are analyzed. Our simulation results show that the number of Cu atoms getting across the substrate surface for Si(1 1 1) substrate is the largest, and the number for Si(1 1 0) substrate is the smallest. This is caused by the difference of the linear atomic densities and planar atomic densities of Si crystal in different directions and planes. The growth of Cu thin films deposited on Si(1 0 0) substrate is (1 0 0) oriented at low temperature, and gradually changes to be (1 1 1) oriented as the increasing of substrate temperature. On the other side, the growth of Cu thin films deposited on Si(1 1 0) and Si(1 1 1) substrates is always (1 1 1) oriented. Increasing substrate temperature could effectively reduce surface roughness, increase the number of Cu atoms with face-centered cubic (fcc) structure, but meanwhile increase the Cu/Si interface diffusion. Under the same substrate temperature condition, the number of Cu atoms with fcc structure in thin films deposited on Si(1 1 0) substrate is larger than that deposited on Si(1 1 1) substrate.
KeywordCopper Thin Film Deposition And Growth Molecular Dynamics Crystalline Structure And Orientation
Subject Area非平衡流
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000318979800060
Funding OrganizationNational Natural Science Foundation of China [11002147, 10921062]
DepartmentLHD微尺度和非平衡流动
Classification一类
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47305
Collection高温气体动力学国家重点实验室
Corresponding AuthorZhang, J (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab High Temp Gas Dynam, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Zhang J,Liu C,Fan J,et al. Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures[J]. APPLIED SURFACE SCIENCE,2013,276:417-423
APA 张俊,刘崇,樊菁,&Zhang, J .(2013).Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures.APPLIED SURFACE SCIENCE,276,417-423.
MLA 张俊,et al."Comparison of Cu thin films deposited on Si substrates with different surfaces and temperatures".APPLIED SURFACE SCIENCE 276(2013):417-423.
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