IMECH-IR  > 国家微重力实验室
Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
Wu K; Zhang YY; Wei TB; Lan D(蓝鼎); Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Source PublicationAIP ADVANCES
2013-09
Volume3Issue:9Pages:092124/1-092124/7
ISSN2158-3226
AbstractThe InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.
KeywordLed Gan Efficiency Atomic Force Microscope(Afm)
Subject Area交叉与边缘领域的力学
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000325282900024
Funding OrganizationNational Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A105, 2011AA03A103]
DepartmentNML空间材料物理力学
ClassificationQ3
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47503
Collection国家微重力实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3(9):092124/1-092124/7.
APA Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Wei, TB .(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3(9),092124/1-092124/7.
MLA Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3.9(2013):092124/1-092124/7.
Files in This Item: Download All
File Name/Size DocType Version Access License
IMCAS-J2013-283.pdf(1608KB) 开放获取--View Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wu K]'s Articles
[Zhang YY]'s Articles
[Wei TB]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wu K]'s Articles
[Zhang YY]'s Articles
[Wei TB]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wu K]'s Articles
[Zhang YY]'s Articles
[Wei TB]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: IMCAS-J2013-283.pdf
Format: Adobe PDF
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.