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Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
Wu K; Zhang YY; Wei TB; Lan D(蓝鼎); Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Source PublicationAIP ADVANCES
2013-09
Volume3Issue:9Pages:092124/1-092124/7
ISSN2158-3226
AbstractThe InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results.
KeywordLed Gan Efficiency Atomic Force Microscope(Afm)
Subject Area交叉与边缘领域的力学
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000325282900024
Funding OrganizationNational Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A105, 2011AA03A103]
DepartmentNML空间材料物理力学
ClassificationQ3
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47503
Collection微重力重点实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3,9,:092124/1-092124/7.
APA Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Wei, TB .(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3(9),092124/1-092124/7.
MLA Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3.9(2013):092124/1-092124/7.
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