IMECH-IR  > 流固耦合系统力学重点实验室
Deformation behavior of single crystal silicon induced by laser shock peening
Liu YX(柳沅汛); Wu XQ(吴先前); Wang X(王曦); Wei YP(魏延鹏); Huang CG(黄晨光); Liu, YX (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Mech Fluid Solid Coupling Syst, Beijing 100190, Peoples R China.
Source Publication2ND INTERNATIONAL SYMPOSIUM ON LASER INTERACTION WITH MATTER (LIMIS 2012)
2013
Pages87962M
Conference Name2nd International Symposium on Laser Interaction with Matter (LIMIS)
Conference DateSEP 09-12, 2012
Conference PlaceXian, PEOPLES R CHINA
AbstractLaser shock peening can significantly improve the fatigue life of metals by introducing plastic deformation and compressive residual stresses near the surface. It has been widely applied on metals for surface strengthening. The plastic deformation behavior of brittle materials such as single crystal silicon under LSP is rarely studied. In the present research, the surface integrity and residual compressive stress of P-type single crystal silicon in < 100 > orientation shocked by LSP at imposed high temperature were measured to investigate the plastic deformation mechanism at high temperature and high compressive stress. The surface morphology of shocked silicon, observed using optical microscopy, showed that the cracks on the shocked silicon surface became less and the fragments were smaller while the temperature or the laser power density increased, which indicates that the plasticity of single crystal silicon is improved at high stress and temperature. However, the excessive laser power density would lead to local damage of the shocked silicon. The residual stress, measured using Raman scattering method, showed that the compressive residual stresses with magnitude of a few hundreds of MPa were introduced in the surface layer of silicon after LSP at imposed high temperature, and it increased with respect to the temperature and the laser power density. The experimental result indicates the material has experienced the plastic deformation and provides a potential processing method to improve the mechanical behavior of brittle material like single crystal silicon.
KeywordLaser Shock Peening Single Crystal Silicon Plastic Deformation Surface Morphology Residual Stress
WOS IDWOS:000323339600094
DepartmentLMFS冲击与耦合效应(LHO)
ISBN978-0-8194-9639-3
URL查看原文
Indexed ByCPCI-S ; EI
Language英语
Citation statistics
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47576
Collection流固耦合系统力学重点实验室
Corresponding AuthorLiu, YX (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Mech Fluid Solid Coupling Syst, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Liu YX,Wu XQ,Wang X,et al. Deformation behavior of single crystal silicon induced by laser shock peening[C]2ND INTERNATIONAL SYMPOSIUM ON LASER INTERACTION WITH MATTER (LIMIS 2012),2013:87962M.
Files in This Item: Download All
File Name/Size DocType Version Access License
GZ10001982.pdf(718KB)会议论文 开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu YX(柳沅汛)]'s Articles
[Wu XQ(吴先前)]'s Articles
[Wang X(王曦)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu YX(柳沅汛)]'s Articles
[Wu XQ(吴先前)]'s Articles
[Wang X(王曦)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu YX(柳沅汛)]'s Articles
[Wu XQ(吴先前)]'s Articles
[Wang X(王曦)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: GZ10001982.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.