Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

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	Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
	Chen B; Wang J(王军); Gao Q; Chen YJ; Liao XZ; Lu CS; Tan HH; Mai YW; Zou J; Ringer SP; Gao HJ; Jagadish C; Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia.
发表期刊	NANO LETTERS
	2013-09-11
卷号	13 期号:9 页码:4369-4373
ISSN	1530-6984
摘要	Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ～5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ～9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
关键词	Gaas Nanowires Strengthening Stacking Fault In Situ Deformation Molecular Dynamics Transmission Electron Microscopy
学科领域	新型材料的力学问题
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000330158900064
项目资助者	Australian Microscopy and Microanalysis Research Facility Node at the University of Sydney; Australian Research Council; National Natural Science Foundation of China [11172024, 11232013, 11372022]; China Postdoctoral Science Foundation [2012T50029]; State Key Laboratory of Nonlinear Mechanics
课题组名称	LNM材料的分子/细观统计力学行为
论文分区	一类
引用统计	被引频次：43[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/47601
专题	非线性力学国家重点实验室
通讯作者	Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia.
推荐引用方式 GB/T 7714	Chen B,Wang J,Gao Q,et al. Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing[J]. NANO LETTERS,2013,13,9,:4369-4373.
APA	Chen B.,Wang J.,Gao Q.,Chen YJ.,Liao XZ.,...&Liao, XZ .(2013).Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing.NANO LETTERS,13(9),4369-4373.
MLA	Chen B,et al."Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing".NANO LETTERS 13.9(2013):4369-4373.

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