IMECH-IR  > 非线性力学国家重点实验室
Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
Chen B; Wang J(王军); Gao Q; Chen YJ; Liao XZ; Lu CS; Tan HH; Mai YW; Zou J; Ringer SP; Gao HJ; Jagadish C; Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia.
Source PublicationNANO LETTERS
2013-09-11
Volume13Issue:9Pages:4369-4373
ISSN1530-6984
AbstractQuantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
KeywordGaas Nanowires Strengthening Stacking Fault In Situ Deformation Molecular Dynamics Transmission Electron Microscopy
Subject Area新型材料的力学问题
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000330158900064
Funding OrganizationAustralian Microscopy and Microanalysis Research Facility Node at the University of Sydney; Australian Research Council; National Natural Science Foundation of China [11172024, 11232013, 11372022]; China Postdoctoral Science Foundation [2012T50029]; State Key Laboratory of Nonlinear Mechanics
DepartmentLNM材料的分子/细观统计力学行为
Classification一类
Citation statistics
Cited Times:43[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47601
Collection非线性力学国家重点实验室
Corresponding AuthorLiao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia.
Recommended Citation
GB/T 7714
Chen B,Wang J,Gao Q,et al. Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing[J]. NANO LETTERS,2013,13,9,:4369-4373.
APA Chen B.,Wang J.,Gao Q.,Chen YJ.,Liao XZ.,...&Liao, XZ .(2013).Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing.NANO LETTERS,13(9),4369-4373.
MLA Chen B,et al."Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing".NANO LETTERS 13.9(2013):4369-4373.
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