Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing | |
Chen B; Wang J(王军); Gao Q; Chen YJ; Liao XZ; Lu CS; Tan HH; Mai YW; Zou J; Ringer SP; Gao HJ; Jagadish C; Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia. | |
Source Publication | NANO LETTERS |
2013-09-11 | |
Volume | 13Issue:9Pages:4369-4373 |
ISSN | 1530-6984 |
Abstract | Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed. |
Keyword | Gaas Nanowires Strengthening Stacking Fault In Situ Deformation Molecular Dynamics Transmission Electron Microscopy |
Subject Area | 新型材料的力学问题 |
URL | 查看原文 |
Indexed By | SCI ; EI |
Language | 英语 |
WOS ID | WOS:000330158900064 |
Funding Organization | Australian Microscopy and Microanalysis Research Facility Node at the University of Sydney; Australian Research Council; National Natural Science Foundation of China [11172024, 11232013, 11372022]; China Postdoctoral Science Foundation [2012T50029]; State Key Laboratory of Nonlinear Mechanics |
Department | LNM材料的分子/细观统计力学行为 |
Classification | 一类 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/47601 |
Collection | 非线性力学国家重点实验室 |
Corresponding Author | Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia. |
Recommended Citation GB/T 7714 | Chen B,Wang J,Gao Q,et al. Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing[J]. NANO LETTERS,2013,13,9,:4369-4373. |
APA | Chen B.,Wang J.,Gao Q.,Chen YJ.,Liao XZ.,...&Liao, XZ .(2013).Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing.NANO LETTERS,13(9),4369-4373. |
MLA | Chen B,et al."Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing".NANO LETTERS 13.9(2013):4369-4373. |
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