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Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography
Wu, Kui1,2; Wei, Tongbo1; Lan, Ding3; Wei, Xuecheng1; Zheng, Haiyang1; Chen, Yu1; Lu, Hongxi1; Huang, Kai4; Wang, Junxi1; Luo, Yi2; Li, Jinmin1; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Source PublicationAPPLIED PHYSICS LETTERS
2013-12-09
Volume103Issue:24Pages:241107/1-241107/5
ISSN0003-6951
AbstractWe reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.; We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires. (C) 2013 AIP Publishing LLC.
Subject Area交叉与边缘领域的力学
DOI10.1063/1.4840137
URL查看原文
Indexed BySCI
Language英语
WOS IDWOS:000328706500007
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Funding OrganizationNational Natural Sciences Foundation of China(61274040 ; National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A103, 2011AA03A105] ; National Basic Research Program of China(2011CB301902) ; National High Technology Program of China(2011AA03A103 ; 61274008) ; 2011AA03A105)
DepartmentNML空间材料物理力学
Classification一类
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/47735
Collection国家微重力实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Affiliation1.Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
2.Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
3.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China
4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215000, Peoples R China
Recommended Citation
GB/T 7714
Wu, Kui,Wei, Tongbo,Lan, Ding,et al. Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography[J]. APPLIED PHYSICS LETTERS,2013,103(24):241107/1-241107/5.
APA Wu, Kui.,Wei, Tongbo.,Lan, Ding.,Wei, Xuecheng.,Zheng, Haiyang.,...&Wei, TB .(2013).Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography.APPLIED PHYSICS LETTERS,103(24),241107/1-241107/5.
MLA Wu, Kui,et al."Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography".APPLIED PHYSICS LETTERS 103.24(2013):241107/1-241107/5.
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