Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography

doi:10.1063/1.4840137

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	Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography
	Wu, Kui 1,2; Wei, Tongbo 1; Lan, Ding3 ; Wei, Xuecheng 1; Zheng, Haiyang 1; Chen, Yu 1; Lu, Hongxi 1; Huang, Kai 4; Wang, Junxi1 ; Luo, Yi2 ; Li, Jinmin1 ; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
发表期刊	APPLIED PHYSICS LETTERS
	2013-12-09
卷号	103 期号:24 页码:241107/1-241107/5
ISSN	0003-6951
摘要	We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.; We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires. (C) 2013 AIP Publishing LLC.
学科领域	交叉与边缘领域的力学
DOI	10.1063/1.4840137
URL	查看原文
收录类别	SCI
语种	英语
WOS记录号	WOS:000328706500007
WOS研究方向	Physics
WOS类目	Physics, Applied
项目资助者	National Natural Sciences Foundation of China(61274040 ; National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A103, 2011AA03A105] ; National Basic Research Program of China(2011CB301902) ; National High Technology Program of China(2011AA03A103 ; 61274008) ; 2011AA03A105)
课题组名称	NML空间材料物理力学
论文分区	一类
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/47735
专题	微重力重点实验室
通讯作者	Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China 2.Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China 3.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China 4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215000, Peoples R China
推荐引用方式 GB/T 7714	Wu, Kui,Wei, Tongbo,Lan, Ding,et al. Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography[J]. APPLIED PHYSICS LETTERS,2013,103,24,:241107/1-241107/5.
APA	Wu, Kui.,Wei, Tongbo.,Lan, Ding.,Wei, Xuecheng.,Zheng, Haiyang.,...&Wei, TB .(2013).Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography.APPLIED PHYSICS LETTERS,103(24),241107/1-241107/5.
MLA	Wu, Kui,et al."Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography".APPLIED PHYSICS LETTERS 103.24(2013):241107/1-241107/5.

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