Improvement of the thermal design in the SiC PVT growth process

doi:10.1016/j.jcrysgro.2013.02.031

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	Improvement of the thermal design in the SiC PVT growth process
	Yan JY(颜君毅); Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
发表期刊	Journal of Crystal Growth
	2014
卷号	385 页码:34-37
ISSN	0022-0248
摘要	The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.
关键词	Fluid Flows Mass Transfer Growth From Vapor Semiconducting Silicon Compounds
学科领域	微重力流体力学
DOI	10.1016/j.jcrysgro.2013.02.031
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000327250100007
关键词[WOS]	PHYSICAL-VAPOR TRANSPORT ; CONVECTIVE HEAT-TRANSFER ; SUBLIMATION GROWTH ; BULK GROWTH ; CRYSTALS ; KINETICS ; MODEL
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
项目资助者	The work was supported by the National Natural Science Foundation of China under Grant nos.10972226 and 11272320.
课题组名称	NML流动稳定性与复杂流动
论文分区	二类/Q2
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/48077
专题	微重力重点实验室
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
推荐引用方式 GB/T 7714	Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[J]. Journal of Crystal Growth,2014,385:34-37.
APA	Yan JY,Chen QS,Jiang YN,Zhang H,&Chen, QS .(2014).Improvement of the thermal design in the SiC PVT growth process.Journal of Crystal Growth,385,34-37.
MLA	Yan JY,et al."Improvement of the thermal design in the SiC PVT growth process".Journal of Crystal Growth 385(2014):34-37.

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