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Improvement of the thermal design in the SiC PVT growth process
Yan JY(颜君毅); Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Source PublicationJOURNAL OF CRYSTAL GROWTH
2014
Pages34-37
Conference Name7th International Workshop on Modeling in Crystal Growth
Conference DateOCT 28-31, 2012
Conference PlaceTaipei,TW, China
AbstractThe physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.
KeywordFluid Flows Mass Transfer Growth From Vapor Semiconducting Silicon Compounds
Department中科院国家微重力实验室
Funding OrganizationNatl Taiwan Univ, Natl Cent Univ, Natl Sci Council Taiwan, Japanese Soc Promot Sci, German Assoc Crystal Growth;HO=
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Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/48259
Collection国家微重力实验室
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[C]JOURNAL OF CRYSTAL GROWTH,2014:34-37.
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