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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
Wu K(吴奎); Wei TB(魏同波); Zheng HY(郑海洋); Lan D(蓝鼎); Wei, XC; Hu, Q; Lu, HX; Wang JX(王军喜); Luo Y(罗毅); Li JM(李晋闽); Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Source PublicationJOURNAL OF APPLIED PHYSICS
2014-03-28
Volume115Issue:12Pages:123101
ISSN0021-8979
AbstractA novel nanopattern technique of nanospherical-lens photolithography is introduced to fabricate the InGaN nanopyramid white (NPW) light-emitting diodes (LEDs) by selective area growth. Highly ordered NPW LED arrays are achieved after optimizing the growth conditions. It is found that the NPW LEDs vary from warm white light to cool with the increase in growth temperature. For the cool white NPW LEDs, the spectrum is similar to the conventional white LEDs obtained from the blue LEDs combined with yellow phosphors. The blue emission originates from the upper sidewalls of nanopyramids, and yellow light is mainly emitted from the lower ridges with respect to the base of nanopyramids. Furthermore, simulation shows that the light extraction efficiency of NPW LEDs is about 4 times higher compared with conventional ones, and the escape cone is as much as 85 degrees due to their three-dimensional nanopyramid structures. These observations suggest that the proposed phosphor-free NPW LEDs may have great potential for highly efficient white lighting. (C) 2014 AIP Publishing LLC.
KeywordQuantum-wells Nonpolar Extraction Efficiency Prospects Emission Nanorod Facets Arrays Layers
Subject AreaPhysics
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000333901100001
Funding OrganizationThis work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61274040 and 51102226, the National Basic Research Program of China under Grant No. 2011CB301902, the National High Technology Program of China under Grant No. 2014AA032605 and Youth Innovation Promotion Association, Chinese Academy of Sciences.
DepartmentNML空间材料物理力学
Classification二类/Q2
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/48793
Collection国家微重力实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wu K,Wei TB,Zheng HY,et al. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography[J]. JOURNAL OF APPLIED PHYSICS,2014,115(12):123101.
APA 吴奎.,魏同波.,郑海洋.,蓝鼎.,Wei, XC.,...&Wei, TB .(2014).Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography.JOURNAL OF APPLIED PHYSICS,115(12),123101.
MLA 吴奎,et al."Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography".JOURNAL OF APPLIED PHYSICS 115.12(2014):123101.
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