Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

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	Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography
	Wu K(吴奎); Wei TB(魏同波); Lan D(蓝鼎); Zheng HY(郑海洋); Wang JX(王军喜); Luo Y(罗毅); Li JM(李晋闽); Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
发表期刊	Chinese Physics B
	2014-02
卷号	23 期号:2 页码:28504
ISSN	1674-1056
摘要	Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.
关键词	Light-emitting-diodes High-extraction-efficiency Blue Improvement
学科领域	Physics
URL	查看原文
收录类别	SCI ; EI ; CSCD
语种	英语
WOS记录号	WOS:000332104800098
项目资助者	Project supported by the National Basic Research Program of China (Grant No. 2011CB301902).
CSCD记录号	CSCD:5044725
课题组名称	NML空间材料物理力学
论文分区	二类/Q2
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录] 被引频次：6[CSCD] [CSCD记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/48794
专题	微重力重点实验室
通讯作者	Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wu K,Wei TB,Lan D,et al. Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography[J]. Chinese Physics B,2014,23,2,:28504.
APA	Wu K.,Wei TB.,Lan D.,Zheng HY.,Wang JX.,...&Wei, TB .(2014).Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography.Chinese Physics B,23(2),28504.
MLA	Wu K,et al."Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography".Chinese Physics B 23.2(2014):28504.

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