IMECH-IR  > 国家微重力实验室
The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
Zhang, YH; Wei, TB; Wang, JX; Lan D(蓝鼎); Chen, Y; Hu, Q; Lu, HX; Li, JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Source PublicationAIP Advances
2014-02
Volume4Issue:2Pages:27123
ISSN2158-3226
AbstractSelf-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
KeywordExtraction
Subject AreaScience & Technology - Other Topics ; Materials Science ; Physics
DOI10.1063/1.4867091
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000332450000023
Funding OrganizationThis work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, by the National Basic Research Program of China under Grant 2011CB301902, and by the National High Technology Program of China under Grant 2014AA032605.
DepartmentNML空间材料物理力学
ClassificationQ3
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/48797
Collection国家微重力实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP Advances,2014,4(2):27123.
APA Zhang, YH.,Wei, TB.,Wang, JX.,蓝鼎.,Chen, Y.,...&Wei, TB .(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP Advances,4(2),27123.
MLA Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP Advances 4.2(2014):27123.
Files in This Item: Download All
File Name/Size DocType Version Access License
IMCAS-J2014-086.pdf(1215KB) 开放获取--View Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, YH]'s Articles
[Wei, TB]'s Articles
[Wang, JX]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, YH]'s Articles
[Wei, TB]'s Articles
[Wang, JX]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, YH]'s Articles
[Wei, TB]'s Articles
[Wang, JX]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: IMCAS-J2014-086.pdf
Format: Adobe PDF
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.