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Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes
Wei TB; Wu K; Lan D(蓝鼎); Sun B; Zhang YH; Chen Y; Huo ZQ; Hu Q; Wang JX; Zeng YP; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Source PublicationAip Advances
2014-06
Volume4Issue:6Pages:67119
ISSN2158-3226
AbstractLarge-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Subject AreaScience & Technology - Other Topics ; Materials Science ; Physics
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000338995700020
Funding OrganizationThis work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, the National Basic Research Program of China under Grant 2011CB301902, the National High Technology Program of China under Grant 2014AA032605 and Youth Innovation Promotion Association, Chinese Academy of Sciences.
DepartmentNML空间材料物理力学
ClassificationQ3
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Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/49031
Collection国家微重力实验室
Corresponding AuthorWei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wei TB,Wu K,Lan D,et al. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes[J]. Aip Advances,2014,4(6):67119.
APA Wei TB.,Wu K.,Lan D.,Sun B.,Zhang YH.,...&Wei, TB .(2014).Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes.Aip Advances,4(6),67119.
MLA Wei TB,et al."Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes".Aip Advances 4.6(2014):67119.
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