IMECH-IR  > 国家微重力实验室
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
Chen XF(陈晓锋); Chen NF(陈诺夫); Wu JL(吴金良); Zhang XL(张秀兰); Chai CL(柴春林); Yu YD(俞育德)
Source Publication半导体学报
2009
Issue8Pages:47-51
AbstractA GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striati...
KeywordChemical Etching Etch Pit Defect Growth Striations Convection
Indexed ByEI
Language英语
Funding Organizationsupported by the Space Agency of China and the Chinese Academy of Sciences
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/55142
Collection国家微重力实验室
Recommended Citation
GB/T 7714
Chen XF,Chen NF,Wu JL,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009(8):47-51.
APA 陈晓锋,陈诺夫,吴金良,张秀兰,柴春林,&俞育德.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报(8),47-51.
MLA 陈晓锋,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 .8(2009):47-51.
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