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Fast Plasma Sintering Deposition of Nano-structured Silicon Carbide Coatings
Huang HJ(黄河激); Fu ZQ(付志强); Pan WX(潘文霞); Wu CK(吴承康)
Source PublicationPhysics Procedia
2012
Volume32Pages:598-604
ISSN1875-3892
AbstractFast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Φ50 mm and 50×50 mm with a deposition rate as high as 20 μm/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment.
KeywordReduced-pressure Plasma Sintering Deposition Silicon Carbide Coating Ultrafast Deposition
DOI10.1016/j.phpro.2012.03.606
Indexed ByCPCI
Language英语
WOS IDWOS:000310677500086
DepartmentLHD应用等离子体力学(CPCR)
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Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/58192
Collection高温气体动力学国家重点实验室
Recommended Citation
GB/T 7714
Huang HJ,Fu ZQ,Pan WX,et al. Fast Plasma Sintering Deposition of Nano-structured Silicon Carbide Coatings[J]. Physics Procedia,2012,32:598-604.
APA Huang HJ,Fu ZQ,Pan WX,&Wu CK.(2012).Fast Plasma Sintering Deposition of Nano-structured Silicon Carbide Coatings.Physics Procedia,32,598-604.
MLA Huang HJ,et al."Fast Plasma Sintering Deposition of Nano-structured Silicon Carbide Coatings".Physics Procedia 32(2012):598-604.
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