IMECH-IR  > 力学所知识产出(1956-2008)
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals
Chen QS(陈启生); Yan JY(颜君毅); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Source PublicationJOURNAL OF CRYSTAL GROWTH
2007
Volume303Issue:1Pages:357-361
ISSN0022-0248
AbstractA 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14 kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa. (c) 2006 Elsevier B.V. All rights reserved.
KeywordFluid Flows Growth Models Growth From Vapor Single-crystal Growth Semiconducting Silicon Compounds
DOI10.1016/j.jcrysgro.2006.11.186
Indexed BySCI
Language英语
WOS IDWOS:000246386900066
WOS KeywordPHYSICAL-VAPOR TRANSPORT ; SILICON-CARBIDE CRYSTALS ; SUBLIMATION GROWTH ; BULK CRYSTAL ; HEAT-TRANSFER
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/58444
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Recommended Citation
GB/T 7714
Chen QS,Yan JY,Prasad V,et al. Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals[J]. JOURNAL OF CRYSTAL GROWTH,2007,303(1):357-361.
APA 陈启生,颜君毅,Prasad V,&Chen, QS .(2007).Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals.JOURNAL OF CRYSTAL GROWTH,303(1),357-361.
MLA 陈启生,et al."Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals".JOURNAL OF CRYSTAL GROWTH 303.1(2007):357-361.
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