Knowledge Management System of Institue of Mechanics, CAS
| Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals | |
Chen QS(陈启生) ; Yan JY(颜君毅); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
| |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| 2007 | |
| Volume | 303Issue:1Pages:357-361 |
| ISSN | 0022-0248 |
| Abstract | A 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14 kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa. (c) 2006 Elsevier B.V. All rights reserved. |
| Keyword | Fluid Flows Growth Models Growth From Vapor Single-crystal Growth Semiconducting Silicon Compounds |
| DOI | 10.1016/j.jcrysgro.2006.11.186 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000246386900066 |
| WOS Keyword | PHYSICAL-VAPOR TRANSPORT ; SILICON-CARBIDE CRYSTALS ; SUBLIMATION GROWTH ; BULK CRYSTAL ; HEAT-TRANSFER |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/58444 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
| Recommended Citation GB/T 7714 | Chen QS,Yan JY,Prasad V,et al. Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals[J]. JOURNAL OF CRYSTAL GROWTH,2007,303(1):357-361. |
| APA | 陈启生,颜君毅,Prasad V,&Chen, QS .(2007).Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals.JOURNAL OF CRYSTAL GROWTH,303(1),357-361. |
| MLA | 陈启生,et al."Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals".JOURNAL OF CRYSTAL GROWTH 303.1(2007):357-361. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| JourArSuppl2016-153.（596KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
