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Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals | |
Chen QS(陈启生); Yan JY(颜君毅); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. | |
发表期刊 | JOURNAL OF CRYSTAL GROWTH |
2007 | |
卷号 | 303期号:1页码:357-361 |
ISSN | 0022-0248 |
摘要 | A 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14 kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa. (c) 2006 Elsevier B.V. All rights reserved. |
关键词 | Fluid Flows Growth Models Growth From Vapor Single-crystal Growth Semiconducting Silicon Compounds |
DOI | 10.1016/j.jcrysgro.2006.11.186 |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000246386900066 |
关键词[WOS] | PHYSICAL-VAPOR TRANSPORT ; SILICON-CARBIDE CRYSTALS ; SUBLIMATION GROWTH ; BULK CRYSTAL ; HEAT-TRANSFER |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://dspace.imech.ac.cn/handle/311007/58444 |
专题 | 力学所知识产出(1956-2008) |
通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
推荐引用方式 GB/T 7714 | Chen QS,Yan JY,Prasad V,et al. Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals[J]. JOURNAL OF CRYSTAL GROWTH,2007,303,1,:357-361. |
APA | 陈启生,颜君毅,Prasad V,&Chen, QS .(2007).Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals.JOURNAL OF CRYSTAL GROWTH,303(1),357-361. |
MLA | 陈启生,et al."Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals".JOURNAL OF CRYSTAL GROWTH 303.1(2007):357-361. |
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