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Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults
Liu LF(刘丽凤); Ding XD; Sun J; Li SZ; Salje EKH; Ding, XD (reprint author), Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China.
Source PublicationNANO LETTERS
2016-01
Volume16Issue:1Pages:194-198
ISSN1530-6984
AbstractBent Cu-Al-Ni nanopillars (diameters 90-750 nm) show a shape memory effect, SME, for diameters D > 300 nm. The SME and the associated twinning are located in a small deformed section of the nanopillar. Thick nanopillars (D > 300 nm) transform to austenite under heating, including the deformed region. Thin nanopillars (D < 130 nm) do not twin but generate highly disordered sequences of stacking faults in the deformed region. No SME occurs and heating converts only the undeformed regions into austenite. The defect-rich, deformed region remains in the martensite phase even after prolonged heating in the stability field of austenite. A complex mixture of twins and stacking faults was found for diameters 130 nm < D < 300 nm. The size effect of the SME in Cu-Al-Ni nanopillars consists of an approximately linear reduction of the SME between 300 and 130 nm when the SME completely vanishes for smaller diameters.
KeywordFinite Size Scaling Shape Memory Effect Size Dependence Of Shape Memory Twinning Stacking Faults Cu-al-ni Alloys
DOI10.1021/acs.nanolett.5b03483
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000368322700031
WOS KeywordRESOLUTION ELECTRON-MICROSCOPY ; PHASE-TRANSFORMATION ; DEFORMATION ; ALLOYS ; NANOCRYSTALLINE ; PROPAGATION ; MARTENSITE ; TRANSITION ; MECHANISMS ; ORIGIN
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationThis work was supported by the National Natural Science Foundation of China (grant nos. 51171140, 51231008, 51321003, and 51320105014), the National Basic Research Program of China (grant no. 2012CB619402), the Program of Introducing Talents of Discipline to Universities in China (grant no. B06025), and The Engineering and Physical Sciences Research Council (grant no. EP/K009702/1). The authors thank "Jia-Lab for Interfaces and Atomic Structure" for letting us use spherical aberration-corrected (S)TEM, and intensive discussions. The authors also thank Xiaolei Wu for helpful discussion, Penghan Lu, Jian Zhang, and Shengwu Guo for the help on the in situ experiments.
DepartmentLNM材料介观力学性能的表征
Classification一类
RankingFalse
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Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/58642
Collection非线性力学国家重点实验室
Corresponding AuthorDing, XD (reprint author), Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China.
Recommended Citation
GB/T 7714
Liu LF,Ding XD,Sun J,et al. Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults[J]. NANO LETTERS,2016,16(1):194-198.
APA Liu LF,Ding XD,Sun J,Li SZ,Salje EKH,&Ding, XD .(2016).Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults.NANO LETTERS,16(1),194-198.
MLA Liu LF,et al."Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults".NANO LETTERS 16.1(2016):194-198.
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