|Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults|
|Liu LF(刘丽凤); Ding XD; Sun J; Li SZ; Salje EKH; Ding, XD (reprint author), Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China.
|Source Publication||NANO LETTERS
|Abstract||Bent Cu-Al-Ni nanopillars (diameters 90-750 nm) show a shape memory effect, SME, for diameters D > 300 nm. The SME and the associated twinning are located in a small deformed section of the nanopillar. Thick nanopillars (D > 300 nm) transform to austenite under heating, including the deformed region. Thin nanopillars (D < 130 nm) do not twin but generate highly disordered sequences of stacking faults in the deformed region. No SME occurs and heating converts only the undeformed regions into austenite. The defect-rich, deformed region remains in the martensite phase even after prolonged heating in the stability field of austenite. A complex mixture of twins and stacking faults was found for diameters 130 nm < D < 300 nm. The size effect of the SME in Cu-Al-Ni nanopillars consists of an approximately linear reduction of the SME between 300 and 130 nm when the SME completely vanishes for smaller diameters.|
|Keyword||Finite Size Scaling
Shape Memory Effect
Size Dependence Of Shape Memory
|WOS Keyword||RESOLUTION ELECTRON-MICROSCOPY
|WOS Research Area||Chemistry
; Science & Technology - Other Topics
; Materials Science
|WOS Subject||Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|Funding Organization||This work was supported by the National Natural Science Foundation of China (grant nos. 51171140, 51231008, 51321003, and 51320105014), the National Basic Research Program of China (grant no. 2012CB619402), the Program of Introducing Talents of Discipline to Universities in China (grant no. B06025), and The Engineering and Physical Sciences Research Council (grant no. EP/K009702/1). The authors thank "Jia-Lab for Interfaces and Atomic Structure" for letting us use spherical aberration-corrected (S)TEM, and intensive discussions. The authors also thank Xiaolei Wu for helpful discussion, Penghan Lu, Jian Zhang, and Shengwu Guo for the help on the in situ experiments.
|Corresponding Author||Ding, XD (reprint author), Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China.|
Liu LF,Ding XD,Sun J,et al. Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults[J]. NANO LETTERS,2016,16(1):194-198.
Liu LF,Ding XD,Sun J,Li SZ,Salje EKH,&Ding, XD .(2016).Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults.NANO LETTERS,16(1),194-198.
Liu LF,et al."Breakdown of Shape Memory Effect in Bent Cu-Al-Ni Nanopillars: When Twin Boundaries Become Stacking Faults".NANO LETTERS 16.1(2016):194-198.
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