IMECH-IR  > 力学所知识产出(1956-2008)
Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy
Liu L; Chen NF(陈诺夫); Gao FB; Yin ZQ; Cui M; Bai YM; Zhang XW
Source PublicationProceedings of SPIE - The International Society for Optical Engineering
Conference NameSolid State Lighting and Solar Energy Technologies
Conference DateNovember 12, 2007 - November 14, 2007
Conference PlaceBeijing, China
AbstractGaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the absorbing edge, Ga 1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.
KeywordGainassb Gasb Lpe Segregation Coefficient Thermophotovoltaic Cell
Indexed ByEI
Document Type会议论文
Recommended Citation
GB/T 7714
Liu L,Chen NF,Gao FB,et al. Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy[C],2008.
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