Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy

IMECH-IR > 力学所知识产出(1956-2008)

	Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy
	Liu L; Chen NF(陈诺夫); Gao FB; Yin ZQ; Cui M; Bai YM; Zhang XW
会议录名称	Proceedings of SPIE - The International Society for Optical Engineering
	2008
会议名称	Solid State Lighting and Solar Energy Technologies
会议日期	November 12, 2007 - November 14, 2007
会议地点	Beijing, China
摘要	GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the absorbing edge, Ga 1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.
关键词	Gainassb Gasb Lpe Segregation Coefficient Thermophotovoltaic Cell
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收录类别	EI
语种	英语
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/60316
专题	力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Liu L,Chen NF,Gao FB,et al. Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy[C]Proceedings of SPIE - The International Society for Optical Engineering,2008.

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