|Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films|
|Gao FY(高方圆); Li G(李光); Xia Y(夏原)
|Source Publication||APPLIED SURFACE SCIENCE
|Abstract||This article reports on the hysteresis effect in TiAlSiN films prepared by an intermediate frequency magnetron. The discharge voltages for different metallic alloy targets varying with nitrogen flow rate were systematically investigated, under a constant pressure provided by sputtering gas. The hysteresis transition was introduced by the sudden changes in sputtering rate, fraction of compound formation, phase composition and mechanical properties. The result was shown that: the initial growth rate aD in metallic mode was 4 times faster than that in supersaturated state. The optimized stoichiometric TiAl(Si)N-x=1 films containing 50 at.% N were founded in the transition region. The discussion on the plasma characteristics caused by hysteresis process showed that the TiN(111) texture could be increased by applying higher particle bombarding energy. The hardness of TiAlSiN film was strongly influenced by the orientation, which depended on the loading history of nitrogen. The superior TiAlSiN film with hardness 33 GPa could be prepared during the nitrogen unloading for same nitrogen flow rates. (C) 2017 Elsevier B.V. All rights reserved.|
|WOS Research Area||Chemistry
; Materials Science
|WOS Subject||Chemistry, Physical
; Materials Science, Coatings & Films
; Physics, Applied
; Physics, Condensed Matter
|Funding Organization||International Science & Technology Cooperation Program of China(2014DFG51240)
; Chinese Academy of Sciences(XDB22040503)
Gao FY,Li G,Xia Y. Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films[J]. APPLIED SURFACE SCIENCE,2018,431:160-164.
高方圆,李光,&夏原.(2018).Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films.APPLIED SURFACE SCIENCE,431,160-164.
高方圆,et al."Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films".APPLIED SURFACE SCIENCE 431(2018):160-164.
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