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Failure mechanisms of 2D silicon film anodes: in situ observations and simulations on crack evolution
Yang L; Chen HS; Jiang HQ; Wei YJ(魏宇杰); Song WL; Fang DN(方岱宁)
Source PublicationCHEMICAL COMMUNICATIONS
2018-04-18
Volume54Issue:32Pages:3997-4000
ISSN1359-7345
AbstractAn in situ optical system was used to observe the failure processes of two-dimensional silicon film anodes, suggesting a new debonding mode based on crack crushing. The stress evolution upon lithiation was quantitatively analyzed via fully coupled finite element simulations, confirming the crack crushing induced failure mechanisms in 2D silicon anodes.
DOI10.1039/c7cc09708e
Indexed BySCI
Language英语
WOS IDWOS:000435250100018
WOS KeywordLITHIUM-ION BATTERIES ; FINITE-ELEMENT-ANALYSIS ; THIN-FILM ; POTENTIOSTATIC OPERATION ; CHEMICAL-EQUILIBRIUM ; RIGID SUBSTRATE ; ELECTRODES ; STRESS ; LITHIATION ; INSERTION
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China(11672341 ; 973 Project(2015CB932500) ; Foundation for Innovative Research Groups of the National Natural Science Foundation of China(11521202) ; National Materials Genome Project(2016YFB0700600) ; Beijing Natural Science Foundation(16L00001) ; 111572002 ; 51302011)
Classification二类/Q1
Ranking4
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/77513
Collection非线性力学国家重点实验室
Recommended Citation
GB/T 7714
Yang L,Chen HS,Jiang HQ,et al. Failure mechanisms of 2D silicon film anodes: in situ observations and simulations on crack evolution[J]. CHEMICAL COMMUNICATIONS,2018,54(32):3997-4000.
APA Yang L,Chen HS,Jiang HQ,魏宇杰,Song WL,&方岱宁.(2018).Failure mechanisms of 2D silicon film anodes: in situ observations and simulations on crack evolution.CHEMICAL COMMUNICATIONS,54(32),3997-4000.
MLA Yang L,et al."Failure mechanisms of 2D silicon film anodes: in situ observations and simulations on crack evolution".CHEMICAL COMMUNICATIONS 54.32(2018):3997-4000.
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