IMECH-IR  > 非线性力学国家重点实验室
Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire
Qi Y; Wang YY; Pang ZQ(庞振乾); Dou ZP; Wei TB; Gao P; Zhang SS; Xu XZ; Chang ZH; Deng B; Chen SL; Chen ZL; Ci HN; Wang RY; Zhao FZ; Yan JC; Yi XY; Liu KH; Peng HL; Liu ZQ; Tong LM; Zhang J; Wei YJ(魏宇杰); Li JM; Liu ZF
2018-09-26
发表期刊JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷号140期号:38页码:11935-11941
ISSN0002-7863
摘要We study the roles of graphene acting as a buffer layer for growth of an A1N film on a sapphire substrate. Graphene can reduce the density of A1N nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AIN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in A1N and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AIN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.
DOI10.1021/jacs.8b03871
URL查看原文
收录类别SCI ; EI
语种英语
WOS记录号WOS:000446142500013
关键词[WOS]VAPOR-PHASE EPITAXY ; LIGHT-EMITTING-DIODES ; SINGLE-CRYSTAL GRAPHENE ; GALLIUM-NITRIDE ; DISLOCATION DENSITY ; RAMAN-SPECTROSCOPY ; ALGAN/GAN HEMTS ; GAN EPILAYERS ; LASER-DIODES ; ALN
WOS研究方向Chemistry, Multidisciplinary
WOS类目Chemistry
项目资助者National Key R&D Program of China [2018YFB0406703] ; National Natural Science Foundation of China [51432002, 61474109, 51290272, 51502007, 11474247, 51672007, Y761020000] ; National Equipment Program of China [ZDYZ2015-1] ; Beijing Municipal Science and Technology Planning Project [Z161100002116020, Z161100002116032] ; Beijing Natural Science Foundation [4182063] ; National Program for Thousand Young Talents of China ; "2011 Program" Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter
论文分区一类
力学所作者排名1
引用统计
文献类型期刊论文
条目标识符http://dspace.imech.ac.cn/handle/311007/77857
专题非线性力学国家重点实验室
作者单位1.Peking Univ, Ctr Nanochem CNC, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
2.Peking Univ, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
3.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
4.Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R China
5.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
6.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
7.Chinese Acad Sci, Res & Dev Ctr Solid State Lighting, Inst Semicond, Beijing 100083, Peoples R China
8.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
9.Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China
10.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China
11.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
12.China Univ Petr, Coll Sci, Qingdao 266580, Peoples R China
13.Beijing Graphene Inst, Beijing 100095, Peoples R China
推荐引用方式
GB/T 7714
Qi Y,Wang YY,Pang ZQ,et al. Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2018,140(38):11935-11941.
APA Qi Y.,Wang YY.,庞振乾.,Dou ZP.,Wei TB.,...&Liu ZF.(2018).Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,140(38),11935-11941.
MLA Qi Y,et al."Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 140.38(2018):11935-11941.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Qi Y]的文章
[Wang YY]的文章
[庞振乾]的文章
百度学术
百度学术中相似的文章
[Qi Y]的文章
[Wang YY]的文章
[庞振乾]的文章
必应学术
必应学术中相似的文章
[Qi Y]的文章
[Wang YY]的文章
[庞振乾]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。